512 Kbit Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
Data Sheet
TABLE 7: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ
1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
5
Units
µs
ms
T7.0 301
T
PU-WRITE1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: C
APACITANCE
Parameter
C
I/O1
C
IN
1
(Ta = 25°C, f=1 Mhz, other pins open)
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T8.0 301
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END
T
DR1
I
LTH1
1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T9.5 301
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
S71060-06-000 6/01
301
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
