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SST39VF400A-70-4I-C1QE 参数 Datasheet PDF下载

SST39VF400A-70-4I-C1QE图片预览
型号: SST39VF400A-70-4I-C1QE
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位/ 4兆位/ 8兆位( X16 )多用途闪存 [2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash]
分类和应用: 闪存
文件页数/大小: 31 页 / 845 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
TABLE 10: DC Operating Characteristics
V
DD
= 3.0-3.6V for SST39LF200A/400A/800A and 2.7-3.6V for SST39VF200A/400A/800A
1
Limits
Symbol
I
DD
Parameter
Power Supply Current
Read
2
Program and Erase
I
SB
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
V
DD
-0.2
0.7V
DD
V
DD
-0.3
0.2
30
30
20
1
10
0.8
V
V
V
V
mA
mA
µA
µA
µA
Min
Max
Units
Test Conditions
Address input=V
ILT
/V
IHT,
at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=V
IL
, OE#=WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
CE#=V
IHC
, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 µA, V
DD
=V
DD
Min
I
OH
=-100 µA, V
DD
=V
DD
Min
T10.7 1117
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and V
DD
= 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the
Multi-Purpose Flash Power Rating
application note for further information.
TABLE 11: Recommended System Power-up Timings
Symbol
T
PU-READ
1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
µs
µs
T11.0 1117
T
PU-WRITE1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: Capacitance
(T
A
= 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T12.0 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: Reliability Characteristics
Symbol
N
END1,2
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T13.2 1117
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
©2007 Silicon Storage Technology, Inc.
S71117-09-000
2/07
12