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SST39WF1601-90-4C-B3KE 参数 Datasheet PDF下载

SST39WF1601-90-4C-B3KE图片预览
型号: SST39WF1601-90-4C-B3KE
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( X16 )多用途闪存+ [16 Mbit (x16) Multi-Purpose Flash Plus]
分类和应用: 闪存内存集成电路
文件页数/大小: 29 页 / 742 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Preliminary Specifications
Toggle Bits (DQ6 and DQ2)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ
6
will produce alternating “1”s
and “0”s, i.e., toggling between 1 and 0. When the internal
Program or Erase operation is completed, the DQ
6
bit will
stop toggling. The device is then ready for the next opera-
tion. For Sector-, Block-, or Chip-Erase, the toggle bit (DQ
6
)
is valid after the rising edge of sixth WE# (or CE#) pulse.
DQ
6
will be set to “1” if a Read operation is attempted on an
Erase-Suspended Sector/Block. If Program operation is ini-
tiated in a sector/block not selected in Erase-Suspend
mode, DQ
6
will toggle.
An additional Toggle Bit is available on DQ
2
, which can be
used in conjunction with DQ
6
to check whether a particular
sector is being actively erased or erase-suspended. Table 1
shows detailed status bits information. The Toggle Bit
(DQ
2
) is valid after the rising edge of the last WE# (or CE#)
pulse of Write operation. See Figure 8 for Toggle Bit timing
diagram and Figure 21 for a flowchart.
TABLE 1: Write Operation Status
Status
Normal
Standard
Operation Program
Standard
Erase
Erase-
Suspend
Mode
Read from
Erase-Suspended
Sector/Block
Read from
Non- Erase-Suspended
Sector/Block
Program
Hardware Block Protection
The SST39WF1602 support top hardware block protec-
tion, which protects the top 32 KWord block of the device.
The SST39WF1601 support bottom hardware block pro-
tection, which protects the bottom 32 KWord block of the
device. The Boot Block address ranges are described in
the 32 KWord when WP# is low. If WP# is left floating, it is
internally held high via a pull-up resistor, and the Boot
Block is unprotected, enabling Program and Erase opera-
tions on that block.
TABLE 2: Boot Block Address Ranges
Product
Bottom Boot Block
SST39WF1601
Top Boot Block
SST39WF1602
0F8000H-0FFFFFH
T2.0 1297
Address Range
000000H-007FFFH
DQ
7
DQ
7
#
0
1
DQ
6
Toggle
Toggle
1
DQ
2
No Toggle
Toggle
Toggle
Hardware Reset (RST#)
The RST# pin provides a hardware method of resetting the
device to read array data. When the RST# pin is held low
for at least T
RP,
any in-progress operation will terminate and
return to Read mode. When no internal Program/Erase
operation is in progress, a minimum period of T
RHR
is
required after RST# is driven high before a valid Read can
take place (see Figure 16).
The Erase or Program operation that has been interrupted
needs to be reinitiated after the device resumes normal
operation mode to ensure data integrity.
Data
Data
Data
DQ
7
#
Toggle
N/A
T1.0 1297
Note:
DQ
7
and DQ
2
require a valid address when reading
status information.
Software Data Protection (SDP)
The SST39WF1601/1602 provide the JEDEC approved
Software Data Protection scheme for all data alteration
operations, i.e., Program and Erase. Any Program opera-
tion requires the inclusion of the three-byte sequence. The
three-byte load sequence is used to initiate the Program
operation, providing optimal protection from inadvertent
Write operations, e.g., during the system power-up or
power-down. Any Erase operation requires the inclusion of
six-byte sequence. These devices are shipped with the
Software Data Protection permanently enabled. See Table
6 for the specific software command codes. During SDP
command sequence, invalid commands will abort the
device to read mode within T
RC.
The contents of DQ
15
-DQ
8
can be V
IL
or V
IH
, but no other value, during any SDP com-
mand sequence.
Data Protection
The SST39WF1601/1602 provide both hardware and soft-
ware features to protect nonvolatile data from inadvertent
writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a write cycle.
V
DD
Power Up/Down Detection: The Write operation is
inhibited when V
DD
is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvert-
ent writes during power-up or power-down.
©2006 Silicon Storage Technology, Inc.
S71297-01-000
7/06
4