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STN1810 参数 Datasheet PDF下载

STN1810图片预览
型号: STN1810
PDF下载: 下载PDF文件 查看货源
内容描述: STN1810是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。 [STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 966 K
品牌: STANSON [ STANSON TECHNOLOGY ]
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STN1810
N Channel Enhancement Mode MOSFET
8.0A
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150
)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
TA=25℃
TA=70
TA=25℃
TA=70
Symbol
VDSS
VGSS
ID
Typical
100
±20
8.0
6.0
12
2.3
2.8
1.8
150
-55/150
80
Unit
V
V
A
A
A
W
/W
IDM
IS
PD
TJ
TSTG
RθJA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1