STN1810
N Channel Enhancement Mode MOSFET
8.0A
ELECTRICAL CHARACTERISTICS
( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source On-
Resistance
Forward
Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
V
DS
=25V,VGS=0V
F=1MHz
V
DS
=80V,V
GS
=5V
I
D
≡5A
10
2.5
4.2
430
58
33
6.5
V
DD
=50V,R
D
=10
V
DS
=30V,R
G
=3.3
I
D
≡5A
10
13
3.4
nS
pF
16
nC
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,ID=250uA
V
DS
=V
GS
,ID=250uA
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
I
DSS
V
DS
=80V,V
GS
=0V
T
J
=5℃
V
DS
≧5V,V
GS
=10V
V
GS
=10V,I
D
=10A
R
DS(on)
V
GS
=7.0V,I
D
=6.5A
gfs
V
SD
V
DS
=5V,I
D
=6.2AV
I
S
=1A,V
GS
=0V
150
5.6
1.3
170
S
V
8
140
155
m
100
1.0
3.0
±100
V
V
nA
250
5
uA
A
I
D(on)
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1
STANSON [ STANSON TECHNOLOGY ]
