IRFP250
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
33
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ±30V
Min.
200
1
50
±100
Typ.
Max.
Unit
V
µA
µA
nA
ON (1)
Symbol
V
GS(th)
R
DS(on)
I
D(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10V, I
D
= 16A
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
33
Min.
2
Typ.
3
0.073
Max.
4
0.085
Unit
V
Ω
A
DYNAMIC
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 16A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
10
Typ.
25
2850
420
120
Max.
Unit
S
pF
pF
pF
2/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
