IRFP250
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 100V, I
D
=16 A
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 160V, I
D
= 33 A,
V
GS
= 10V, R
G
= 4.7Ω
Min.
Typ.
25
50
117
15
50
158
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 160V, I
D
= 16 A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
60
40
100
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 33 A, V
GS
= 0
I
SD
= 33 A, di/dt = 100A/µs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
370
5.4
29
Test Conditions
Min.
Typ.
Max.
33
132
1.6
Unit
A
A
V
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
