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M29F400BB90N1T 参数 Datasheet PDF下载

M29F400BB90N1T图片预览
型号: M29F400BB90N1T
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位512KB ×8或256Kb的X16 ,引导块单电源闪存 [4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 22 页 / 201 K
品牌: STMICROELECTRONICS [ ST ]
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M29F400BT, M29F400BB  
Block Erase Command. The Block Erase com-  
mand can be used to erase a list of one or more  
blocks. Six Bus Write operations are required to  
select the first block in the list. Each additional  
block in the list can be selected by repeating the  
sixth Bus Write operation using the address of the  
additional block. The Block Erase operation starts  
the Program/Erase Controller about 50µs after the  
last Bus Write operation. Once the Program/Erase  
Controller starts it is not possible to select any  
more blocks. Each additional block must therefore  
be selected within 50µs of the last block. The 50µs  
timer restarts when an additional block is selected.  
The Status Register can be read after the sixth  
Bus Write operation. See the Status Register for  
details on how to identify if the Program/Erase  
Controller has started the Block Erase operation.  
If any selected blocks are protected then these are  
ignored and all the other selected blocks are  
erased. If all of the selected blocks are protected  
the Block Erase operation appears to start but will  
terminate within about 100µs, leaving the data un-  
changed. No error condition is given when protect-  
ed blocks are ignored.  
During the Block Erase operation the memory will  
ignore all commands except the Erase Suspend  
and Read/Reset commands. Typical block erase  
times are given in Table 9. All Bus Read opera-  
tions during the Block Erase operation will output  
the Status Register on the Data Inputs/Outputs.  
See the section on the Status Register for more  
details.  
After the Block Erase operation has completed the  
memory will return to the Read Mode, unless an  
error has occurred. When an error occurs the  
memory will continue to output the Status Regis-  
ter. A Read/Reset command must be issued to re-  
set the error condition and return to Read mode.  
The Block Erase Command sets all of the bits in  
the unprotected selected blocks to ’1’. All previous  
data in the selected blocks is lost.  
Erase Suspend Command. The Erase Suspend  
Command may be used to temporarily suspend a  
Block Erase operation and return the memory to  
Read mode. The command requires one Bus  
Write operation.  
The Program/Erase Controller will suspend within  
15µs of the Erase Suspend Command being is-  
sued. Once the Program/Erase Controller has  
stopped the memory will be set to Read mode and  
the Erase will be suspended. If the Erase Suspend  
command is issued during the period when the  
memory is waiting for an additional block (before  
the Program/Erase Controller starts) then the  
Erase is suspended immediately and will start im-  
mediately when the Erase Resume Command is  
issued. It will not be possible to select any further  
blocks for erasure after the Erase Resume.  
During Erase Suspend it is possible to Read and  
Program cells in blocks that are not being erased;  
both Read and Program operations behave as  
normal on these blocks. Reading from blocks that  
are being erased will output the Status Register. It  
is also possible to enter the Auto Select mode: the  
memory will behave as in the Auto Select mode on  
all blocks until a Read/Reset command returns the  
memory to Erase Suspend mode.  
Erase Resume Command. The Erase Resume  
command must be used to restart the Program/  
Erase Controller from Erase Suspend. An erase  
can be suspended and resumed more than once.  
Table 9. Program, Erase Times and Program, Erase Endurance Cycles  
(T = 0 to 70°C, –40 to 85°C or –40 to 125°C)  
A
Typical after  
(1)  
Parameter  
Min  
Max  
Unit  
Typ  
(1)  
100k W/E Cycles  
Chip Erase (All bits in the memory set to ‘0’)  
Chip Erase  
1.5  
1.5  
5
sec  
sec  
5
20  
4
Block Erase (64 Kbytes)  
0.6  
8
0.6  
8
sec  
Program (Byte or Word)  
150  
18  
9
µs  
Chip Program (Byte by Byte)  
Chip Program (Word by Word)  
4.5  
2.3  
4.5  
2.3  
sec  
sec  
Program/Erase Cycles (per Block)  
100,000  
cycles  
Note: 1. T = 25°C, V = 5V.  
A
CC  
9/22