Electrical characteristics
STM8S105xx
Symbol Parameter
Fast programming time for 1 block
(128 bytes)
t
erase
N
RW
Erase time for 1 block (128 bytes)
Erase/write cycles (program
memory)
Erase/write cycles(data memory)
t
RET
Conditions
Min
Typ Max
3
3.3
Unit
ms
3
T
A
= +85 °C
10 k
3.3
ms
cycles
T
A
= +125 ° C
300 k 1M
20
years
Data retention (program memory) T
RET
= 55° C
after 10k erase/write cycles at T
A
= +85 °C
Data retention (data memory) after T
RET
= 55° C
10k erase/write cycles at T
A
= +85
°C
Data retention (data memory) after T
RET
= 85° C
300 k erase/write cyclesat T
A
=
+125 °C
20
1
I
DD
Supply current (Flash
programming or erasing for 1 to
128 bytes)
2
mA
(1)
(2)
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
even when a write/erase operation addresses a single byte.
10.3.6
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
DD
and T
A
unless otherwise specified. All unused
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Table 38: I/O static characteristics
Symbol Parameter
V
IL
Input low level
voltage
Conditions
V
DD
= 5 V
Min
-0.3
Typ
Max
0.3 x V
DD
Unit
V
82/127
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