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STM8S105C4B3 参数 Datasheet PDF下载

STM8S105C4B3图片预览
型号: STM8S105C4B3
PDF下载: 下载PDF文件 查看货源
内容描述: 接入线路, 16兆赫STM8S 8位MCU ,最多32 KB闪存,集成的EEPROM , 10位ADC ,定时器, UART , SPI , I²C [Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 127 页 / 1323 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STM8S105xx
Electrical characteristics
Symbol Parameter
V
IH
Input high level
voltage
Hysteresis
Conditions
Min
0.7 x
V
DD
Typ
Max
V
DD
+ 0.3
V
Unit
V
V
hys
R
pu
t
R
, t
F
700
V
DD
= 5 V, V
IN
= V
SS
30
45
60
20
mV
ns
ns
Pull-up resistor
Rise and fall
Fast I/Os load = 50 pF
time(10 % - 90 %)
Standard and high sink
I/OsLoad = 50 pF
125
I
lkg
Input leakage
current, analog
and digital
Analog input
leakage current
V
SS
≤ V
IN
≤ V
DD
±1
µA
I
lkg ana
V
SS
≤ V
IN
≤ V
DD
±250
nA
I
lkg(inj)
Leakage current in Injection current ±4 mA
adjacent I/O
±1
µA
(1)
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization
results, not tested in production.
(2)
Data based on characterization results, not tested in production.
Figure 24: Typical V
IL
and V
IH
vs V
DD
@ 4 temperatures
DocID14771 Rev 9
83/127