STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
THERMAL DATA
I
²
PAK
D²PAK
TO-220
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
1.36
62.5
300
TO-220FP
5
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 20 V
Min.
60
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 27.5 A
Min.
2
Typ.
3
0.015
Max.
4
0.018
Unit
V
Ω
DYNAMIC
Symbol
g
fs (*)
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15 V
I
D
= 27.5 A
Min.
Typ.
18
1530
300
105
Max.
Unit
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
