STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
I
D
= 27.5 A
V
DD
= 30 V
R
G
= 4.7
Ω
V
GS
= 10 V
(Resistive Load, Figure 3)
V
DD
= 48 V I
D
= 55 A V
GS
= 10V
Min.
Typ.
16
8
44.5
10.5
17.5
60
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
I
D
= 27.5 A
V
DD
= 30V
R
G
= 4.7Ω,
V
GS
= 10 V
(Resistive Load, Figure 3)
Min.
Typ.
36
15
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SDM (
•
)
V
SD (*)
t
rr
Q
rr
I
RRM
I
SD
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 55A
V
GS
= 0
75
170
4.5
Test Conditions
Min.
Typ.
Max.
50
200
1.5
Unit
A
A
V
ns
nC
A
di/dt = 100A/µs
I
SD
= 55 A
V
DD
= 30 V
T
j
= 150°C
(see test circuit, Figure 5)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by safe operating area.
Safe Operating Area for
Safe Operating Area for TO-220FP
3/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
