STPS340
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current (per
diode)
I
F(AV)
(A)
3.5
Average forward current versus
ambient temperature (δ = 0.5, per
diode) (DPAK / SMB / SMC)
P
F(AV)
(W)
2.5
δ
= 0.05
2.0
δ
= 0.1
δ
= 0.2
δ
= 0.5
3.0
R
th(j-a)
=R
th(j-l)
DPAK
δ
=1
1.5
2.5
SMB / SMC
2.0
1.5
1.0
R
th(j-a)
=65°C/W
1.0
0.5
T
0.5
T
I
F(AV)
(A)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
δ
=tp/T
3.5
tp
0.0
4.0
0
δ
=tp/T
25
tp
50
T
amb
(°C)
75
100
125
150
Figure 3.
Average forward current versus
ambient temperature (δ = 0.5, per
diode) (SMB flat)
Figure 4.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (DPAK)
I
F(AV)
(A)
3.5
R
th(j-a)
=R
th(j-l)
I
M
(A)
60
DPAK
3.0
2.5
50
40
2.0
SMB flat
30
T
c
=25°C
T
c
=75°C
1.5
1.0
R
th(j-a)
=40°C/W
. S
CU
=2.5 cm
2
20
I
M
t
T
0.5
0.0
0
10
T
c
=125°C
δ
=tp/T
25
tp
50
T
amb
(°C)
0
75
100
125
150
1.E-03
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
SMB
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMC)
SMC
I
M
(A)
10
9
8
7
T
a
=25°C
I
M
(A)
12
11
10
9
8
7
6
T
a
=75°C
T
a
=75°C
T
a
=25°C
6
5
4
3
2
1
0
1.E-03
1.E-02
1.E-01
1.E+00
I
M
t
5
4
3
T
a
=125°C
2
δ
=0.5
I
M
t
T
a
=125°C
t(s)
1
0
1.E-03
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
3/11
STMICROELECTRONICS [ STMICROELECTRONICS ]
