STPS340
Characteristics
Figure 13. Relative variation of thermal
impedance junction to lead
versus pulse duration - SMB flat
Z
th(j-l)
/R
th(j-l)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
SMB flat
Figure 14. Reverse leakage current versus
reverse voltage applied (typical
values)
I
R
(mA)
1.E+01
T
j
=150°C
1.E+00
T
j
=125°C
T
j
=100°C
1.E-01
T
j
=75°C
1.E-02
T
j
=25°C
0.2
Single pulse
1.E-03
0.1
0.0
1.E-04
1.E-03
1.E-02
t
p
(s)
1.E-04
1.E-01
1.E+00
1.E+01
V
R
(V)
0
5
10
15
20
25
30
35
40
Figure 15. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 16. Forward voltage drop versus
forward current
I
FM
(A)
10
T
j
=125°C
(Maximum values)
1
100
T
j
=125°C
(Typical values)
0
T
j
=25°C
(Maximum values)
V
R
(V)
10
1
10
100
V
FM
(V)
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Figure 17. Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
board FR4, e
CU
= 35 µm) (DPAK)
R
th(j-a)
(°C/W)
100
90
80
70
60
50
DPAK
Figure 18. Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
board FR4, e
CU
= 35 µm)
(SMB / SMC)
R
th(j-a)
(°C/W)
110
100
90
80
70
60
50
SMB / SMC
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
40
30
20
S
CU
(cm²)
10
0
0.0
0.5
1.0
1.5
2.0
S
CU
(cm²)
2.5
3.0
3.5
4.0
4.5
5.0
5/11
STMICROELECTRONICS [ STMICROELECTRONICS ]
