SMM150
Preliminary Information
Temperature Under Bias ...................... -55
°
C to 125
°
C
Storage Temperature QFN ................... -65
°
C to 150
°
C
Terminal Voltage with Respect to GND:
VDD Supply Voltage ..........................-0.3V to 6.0V
All Others ................................-0.3V to V
DD
+ 0.7V
FAULT#…………………………….… GND to 15.0V
Output Short Circuit Current ............................... 100mA
Reflow Solder Temperature (10 secs)….………....240
°
C
Junction Temperature.........................…….....…...150°C
ESD Rating per JEDEC……………………..……..2000V
Latch-Up testing per JEDEC………..……......…±100mA
Note - The device is not guaranteed to function outside its operating
rating. Stresses listed under Absolute Maximum Ratings may cause
permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions
outside those listed in the operational sections of the specification is
not implied. Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability. Devices are
ESD sensitive. Handling precautions are recommended.
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Temperature Range (Industrial) .......... –40
°
C to +85
°
C
(Commercial).............. 0
°
C to +70
°
C
VDD Supply Voltage.................................. 2.7V to 5.5V
Inputs.........................................................GND to VDD
Package Thermal Resistance (θ
JA
)
28 Pad QFN…………….…………………….…80
o
C/W
20 Ball
Ultra
CSP
TM
………..………….…….…TBD
o
C/W
Moisture Classification Level 1 (MSL 1) per J-STD- 020
RELIABILITY CHARACTERISTICS
Data Retention……………………………..…..100 Years
Endurance……………………….……….100,000 Cycles
DC OPERATING CHARACTERISTICS
(Over recommended operating conditions, unless otherwise noted. All voltages are relative to GND.)
Symbol
Parameter
Notes
Min.
Typ.
Max
Unit
VDD
VM
I
DD
I
TRIM
V
TRIM
V
ADOC
V
IH
V
IL
V
OL
V
AIH
V
AIL
I
AIT
OV/UV
V
HYST
R
Pull-Up
Supply Voltage
Positive Sense Voltage
Power Supply Current from
VDD
TRIM output current through
100Ω to 1.0V
TRIM output voltage range
Margin Range
Input High Voltage
SDA,SCL,WP,MUP,MDN
Input Low Voltage
SDA,SCL,WP,MUP,MDN
Open Drain Output
FAULT#, READY
Address Input High Voltage,
A2, A1, A0
Address Input Low Voltage,
A2, A1, A0
Address Input Tristate
Maximum Leakage – High Z
Monitor Voltage Range
COMP1/2 DC Hysteresis
Input Pull-Up Resistors
VM pin
TRIM pin floating
TRIM Sourcing Max Current
TRIM Sinking Max Current
I
TRIM
±1.5mA
Depends on Trim range of DC-
DC Converter
VDD = 2.7V
VDD = 5.0V
VDD = 2.7V
VDD = 5.0V
ISINK = 1mA
VDD = 2.7V, R
pullup
≤300kΩ
VDD = 5.0V, R
pullup
≤300kΩ
VDD = 2.7V, R
pulldown
≤300kΩ
VDD = 5.0V, R
pulldown
≤300kΩ
VDD = 2.7V
VDD = 5.0V
COMP1 and COMP2 pins
COMP1 and COMP2 pins,
V
TH
-V
TL
(see Note 1)
See Pin Descriptions
0.9xVDD
0.7xVDD
2.7
0.3
3
1.5
-1.5
GND
0.3
0.9xVDD
0.7xVDD
2.5
VDD
VDD
VDD
0.1xVDD
0.3xVDD
0.2
VDD
VDD
0.1xVDD
0.3xVDD
+1.4
+1.6
VDD
10
50
3.3
5.5
VDD
V
V
mA
mA
mA
V
V
V
V
V
V
V
µA
V
mV
kΩ
-1.8
-2.0
0
Note 1 – The Base DC Hysteresis voltage is measured with a 1.25V external voltage source. The resulting value is determined by subtracting
Threshold Low from Threshold High, V
TH
-V
TL
while monitoring the FAULT# pin state. Base DC Hysteresis is measured with a 1.25V input. Actual DC
Hysteresis is derived from the equation: (V
IN
/V
REF
)(Base Hysteresis). For example, if V
IN
=2.5V and V
REF
=1.25V then Actual DC Hysteresis=
(2.5V/1.25V)(0.003V)=6mV.
Summit Microelectronics, Inc
2075 2.6 05/13/05
5
SUMMIT [ SUMMIT MICROELECTRONICS, INC. ]
