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TS18 参数 Datasheet PDF下载

TS18图片预览
型号: TS18
PDF下载: 下载PDF文件 查看货源
内容描述: 多层陶瓷片式电容器 - SMD [MULTILAYER CERAMIC CHIP CAPACITOR - SMD]
分类和应用: 电容器
文件页数/大小: 10 页 / 282 K
品牌: SUNTAN [ SUNTAN CAPACITORS ]
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MULTILAYER CERAMIC CHIP CAPACITOR - SMD
Suntan
®
TS18
Specification and Test Condition:
1. Appearance
Dielectrics
NPO/X7R/X5R/Y5V
2. Dimensions
Dielectrics
NPO/X7R/X5R/Y5V
3. Capacitance
Dielectrics
NPO
Specification
Within the specified tolerance
B:±0.1pF;C:±0.25pF;D:±0.5pF;J:
±5%
Within the specified tolerance
J: ±5%;K: ±10%; M: ±20%
Within the specified tolerance
M: ±20%; Z: -20%, +80%
Testing Condition
1.0±0.2Vrms, 1MHz±10%
(C>1000 pF, 1.0±0.2Vrms, 1KHz±10%,)
25℃。
1.0±0.2Vrms, 1KHz±10%
(Cp>10uF,0.5±0.1Vrms,120±24Hz)
at 25℃,48hrs after annealing
1.0±0.2Vrms, 1KHz±10%
(Cp>10uF,0.5±0.1Vrms,120±24Hz)
at 25℃, 48hrs after annealing
Specification
Within the specified dimensions
Testing Condition
Using calipers on micrometer
Specification
No defects or abnormalities
Testing Condition
Visual inspection.
X7R/X5R
Y5V
4. Dissipation Factor
Dielectrics
NPO
Specification
Cp<30pF, Q≥400+20Cp;
Cp≥30pF, Q≥1000
U
R
25V, DF
≤2.5%
U
R
=16V, DF
≤3.5%
U
R
≤10V,
DF
≤5.0%
U
R
25V, DF
≤7.0%
(C<1.0μF)
DF
≤9.0%
(C≥1.0μF)
U
R
=16V, DF
≤9.0%
U
R
≤10V,
DF
≤12.5%
Testing Condition
1.0±0.2Vrms,1MHz±10% ,25℃
(Cp>1000pF,1.0±0.2Vrms,1KHz±10%)
1.0±0.2Vrms, 1KHz±10%,
(Cp>10uF,0.5±0.1Vrms,120±24Hz)
at 25℃,48hrs after annealing
1.0±0.2Vrms, 1KHz±10%,
(Cp>10uF,0.5±0.1Vrms,120±24Hz)
at 25℃,48hrs after annealing
X7R/X5R
Y5V
Suntan
®
Technology Company Limited
Website: www.suntan.com.hk
Email: info@suntan.com.hk
Tel: (852) 8202 8782
Fax: (852) 8208 6246