MULTILAYER CERAMIC CHIP CAPACITOR - SMD
Suntan
®
TS18
11. Bending
Dielectrics
NPO
Specification
No remarkable visual damage
Cp change
≤
±5% or
≤
0.5 pF
No remarkable visual damage
Cp change
≤
±12.5%
Testing Condition
Solder the capacitor on testing substrate and
put it on testing stand. The middle part of
substrate shall successively be pressurized
by pressuring rod at a rated of about
1.0mm/sec. Until the deflection become
means of the 1.0mm.
X7R/X5R
Y5V
No remarkable visual damage
Cp change
≤
±30%
12. Resistance to Soldering Heat
Dielectrics
NPO
Testing Condition
Soldering temperature: 270±5℃
No remarkable visual damage
Preheating: 120~150℃ 60sec.
Cp change within ±2.5% or ±0.25pF, Dipping time: 10±1 seconds.
whichever is larger.
Measurement to be made after being kept at
DF meets initial standard value.
room temperature for 24±2 (C0G) or
IR meets initial standard value.
48±4(X7R ,X5R, Y5V) hours.
Recov ery for the following period under
No remarkable visual damage
the standard condition after test.
Cp change within ±5%
DF meets initial standard value.
*Initial measurement for high dielectric
constant type
IR meets initial standard value.
Perform a heat treatment at 140~150℃ for
No remarkable visual damage
1hr and let sit for 48±4hrs at room
Cp change within ±20%
temperature. Perform the initial
DF meets initial standard value.
measurement.
IR meets initial standard value.
Specification
X7R/X5R
Y5V
Suntan
®
Technology Company Limited
Website: www.suntan.com.hk
Email: info@suntan.com.hk
Tel: (852) 8202 8782
Fax: (852) 8208 6246