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CD74HCT670MTG4 参数 Datasheet PDF下载

CD74HCT670MTG4图片预览
型号: CD74HCT670MTG4
PDF下载: 下载PDF文件 查看货源
内容描述: 高速CMOS逻辑4×4寄存器文件 [High-Speed CMOS Logic 4x4 Register File]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 17 页 / 568 K
品牌: TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
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CD54HC670, CD74HC670, CD74HCT670
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
PARAMETER
Quiescent Device
Current
Three- State Leakage
Current
HCT TYPES
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
CMOS Loads
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
Three- State Leakage
Current
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
NOTE:
4. For dual-supply systems theoretical worst case (V
I
= 2.4V, V
CC
= 5.5V) specification is 1.8mA.
∆I
CC
(Note 4)
I
I
I
CC
V
CC
and
GND
V
CC
or
GND
V
IL
or V
IH
V
OL
V
IH
or V
IL
V
IH
V
IL
V
OH
-
-
V
IH
or V
IL
-
-
-0.02
4.5 to
5.5
4.5 to
5.5
4.5
2
-
4.4
-
-
-
-
0.8
-
2
-
4.4
-
0.8
-
2
-
4.4
-
0.8
-
V
V
V
SYMBOL
I
CC
V
I
(V)
V
CC
or
GND
V
IL
or V
IH
I
O
(mA)
0
V
O
=
V
CC
or
GND
25
o
C
MIN
-
-
TYP
-
-
MAX
8
±0.5
-40
o
C TO 85
o
C -55
o
C TO 125
o
C
MIN
-
-
MAX
80
±5.0
MIN
-
-
MAX
160
±10
UNITS
µA
µA
V
CC
(V)
6
6
-6
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
6
4.5
-
-
0.26
-
0.33
-
0.4
V
0
0
V
O
=
V
CC
or
GND
-
5.5
5.5
5.5
-
-
-
-
-
±0.1
8
±0.5
-
-
-
±1
80
±5.0
-
-
-
±1
160
±10
µA
µA
µA
V
CC
-2.1
4.5 to
5.5
-
100
360
-
450
-
490
µA
HCT Input Loading Table
INPUT
WE
WA0
WA1
RE
DATA
RA0
RA1
UNIT LOADS
0.3
0.2
0.4
1.5
0.15
0.4
0.7
NOTE: Unit Load is
∆I
CC
limit specific in DC Electrical Specifications
Table, e.g., 360µA max. at 25
o
C.
4