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DS90UB914Q 参数 Datasheet PDF下载

DS90UB914Q图片预览
型号: DS90UB914Q
PDF下载: 下载PDF文件 查看货源
内容描述: DS90UB913Q / DS90UB914Q 10-100MHz 10 / 12位DC平衡的FPD -Link的III串行器和解串与双向控制通道 [DS90UB913Q/DS90UB914Q 10-100MHz 10/12- Bit DC-Balanced FPD-Link III Serializer and Deserializer with Bidirectional Control Channel]
分类和应用: 光电二极管
文件页数/大小: 63 页 / 1331 K
品牌: TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
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SNLS420B – JULY 2012 – REVISED APRIL 2013
Recommended Operating Conditions
Min
Supply Voltage (V
DDn
)
LVCMOS Supply Voltage (V
DDIO
)
OR
LVCMOS Supply Voltage (V
DDIO
)
OR
LVCMOS Supply Voltage (V
DDIO
) Only
Serializer
Supply Noise
(1)
V
DDn
(1.8V)
V
DDIO
(1.8V)
V
DDIO
(3.3V)
Operating Free Air
Temperature (T
A
)
-40
10
+25
PCLK Clock Frequency
(1)
1.71
1.71
3.0
2.52
Nom
1.8
1.8
3.3
2.8
Max
1.89
1.89
3.6
3.08
25
25
50
+105
100
Units
V
V
V
V
mVp-p
mVp-p
mVp-p
°C
MHz
Supply noise testing was done with minimum capacitors (as shown on
on the PCB. A sinusoidal signal is AC
coupled to the VDDn (1.8V) supply with amplitude = 25 mVp-p measured at the device VDDn pins. Bit error rate testing of input to the
Ser and output of the Des with 10 meter cable shows no error when the noise frequency on the Ser is less than 1 MHz. The Des on the
other hand shows no error when the noise frequency is less than 750 kHz.
Electrical Characteristics
(1) (2) (3)
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
V
IH
V
IL
I
IN
V
OH
V
OL
I
OS
Parameter
High Level Input
Voltage
Low Level Input
Voltage
Input Current
High Level Output
Voltage
Low Level Output
Voltage
Output Short Circuit
Current
Conditions
V
IN
= 3.0V to 3.6V
V
IN
= 3.0V to 3.6V
V
IN
= 0V or 3.6V
V
IN
= 3.0V to 3.6V
V
DDIO
= 3.0V to 3.6V
I
OH
=
−4
mA
V
DDIO
= 3.0V to 3.6V
I
OL
= +4 mA
V
OUT
= 0V
Serializer
GPO Outputs
Deserializer
LVCMOS Outputs
I
OZ
TRI-STATE® Output
Current
High Level Input
Voltage
Low Level Input
Voltage
Input Current
High Level Output
Voltage
PDB = 0V,
V
OUT
= 0V or V
DD
V
IN
= 1.71V to 1.89V
V
IN
= 1.71V to 1.89V
V
IN
= 0V or 1.89V
V
IN
= 1.71V to 1.89V
V
DDIO
= 1.71V to 1.89V
I
OH
=
−4
mA
LVCMOS Outputs
-20
Min
Typ
Max
Units
LVCMOS DC SPECIFICATIONS 3.3V I/O (SER INPUTS, DES OUTPUTS, GPI, GPO, CONTROL INPUTS AND OUTPUTS)
2.0
GND
-20
2.4
GND
-15
mA
-35
+20
µA
±1
V
IN
0.8
+20
V
DDIO
0.4
V
V
µA
V
V
LVCMOS DC SPECIFICATIONS 1.8V I/O (SER INPUTS, DES OUTPUTS, GPI, GPO, CONTROL INPUTS AND OUTPUTS)
V
IH
V
IL
I
IN
V
OH
0.65 V
IN
GND
-20
V
DDIO
-
0.45
±1
V
IN
V
0.35 V
IN
+20
V
DDIO
µA
V
(1)
(2)
(3)
8
The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured.
Current into device pins is defined as positive. Current out of a device pin is defined as negative. Voltages are referenced to ground
except VOD,
ΔVOD,
VTH and VTL which are differential voltages.
Typical values represent most likely parametric norms at 1.8V or 3.3V, T
A
= +25°C, and at the Recommended Operation Conditions at
the time of product characterization and are not specified.
Copyright © 2012–2013, Texas Instruments Incorporated
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