DG417/418/419
Specifications
a
for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
V
ANALOG
r
DS(on)
I
S
= –10 mA, V
D
= 3.8 V
V+ = 10.8 V
Full
Room
40
0
12
0
12
V
W
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V+ = 12 V, V– = 0 V
VV
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
t
ON
t
OFF
t
D
Q
R
L
= 300
W
, C
L
= 35 pF, V
S
= 8 V
p ,
S S i hi Ti T Ci i
See Switching Time Test Circuit
R
L
= 300
W
, C
L
= 35 pF
DG419
Room
Room
Room
Room
110
40
60
5
pC
ns
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
W
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I–
I
L
I
GND
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 or 5 V
Room
Room
Room
Room
0.001
–0.001
0.001
–0.001
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
4
Siliconix
S-52880—Rev. D, 28-Apr-97
TEMIC [ TEMIC SEMICONDUCTORS ]
