DG417/418/419
Typical Characteristics
50
r
DS(on)
vs. V
D
and Supply Voltage
I
D
= –10 mA
"5
V
40
r
DS(on)
vs. Temperature
40
"8
V
r
DS(on)
(
W
)
30
"10
V
"12
V
"15
V
"20
V
10
r
DS(on)
(
W
)
30
T
A
= 125_C
20
25_C
–55_C
20
10
0
–20
–15
–10
–5
0
5
10
15
20
V
D
– Drain Voltage (V)
30
20
10
I (pA)
0
–10
–20
–30
–15
–10
–5
0
5
10
15
V
D
or V
S
– Drain or Source Voltage (V)
DG417/418: I
D(on)
DG419: I
D(off)
, I
D(on)
0
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
200
Leakage Currents vs. Analog Voltage
V+ = 15 V
V– = –15 V
V
L
= 5 V
DG417/418: I
D(off)
, I
S(off)
DG419: I
S(off)
Q (pC)
Drain Charge Injection
V+ = 16.5 V
V– = –16.5 V
V
L
= 5 V
V
IN
= 0 V
C
L
= 10 nF
1 nF
150
100
500 pF
50
100 pF
0
–50
–15
–10
–5
0
5
10
15
V
S
– Source Voltage (V)
3.5
3.0
2.5
V
IN
(V)
Input Switching Threshold vs. Supply Voltages
50
42
40
Operating Voltage Range
1.5
1.0
0.5
V
L
= 5 V
V+ (V)
2.0
V
L
= 7 V
30
20
10
2
0
10
–10
15
–15
20
–10
25
–5
30
0
35
0
40
0
0
(V+) 5
(V–) –5
Siliconix
S-52880—Rev. D, 28-Apr-97
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5 V CMOS
Compatible
F
F
TTL Compatible
V
IN
= 0.8 V, 2.4 V
0
CMOS Compatible
–40
–10
–20
–30
Negative Supply V– (V)
F
= Voltages Used for Production Testing
5
TEMIC [ TEMIC SEMICONDUCTORS ]
