DS_8024RN_020
73S8024RN Data Sheet
12.4 Smart Card Interface Requirements
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Card Power Supply (V
CC
) Regulator
General conditions, -40
°
C < T < 85
°
C, 4.75v < V
PC
< 5.5v, 2.7v < V
DD
< 5.5v
NDS conditions, 4.85v < V
PC
< 5.5v
Inactive mode
Inactive mode
I
CC
= 1mA
Active mode; I
CC
<65mA; 5v
Active mode; I
CC
<65mA; 5v,
NDS condition
Active mode; I
CC
<90mA; 5v
Active mode; I
CC
<90mA; 3v
Active mode; single pulse of
100mA for 2μs; 5 volt, fixed load
= 25mA
Active mode; single pulse of
100mA for 2μs; 3v, fixed load =
25mA
Active mode; current pulses of
40nAs with peak |I
CC
| <200mA,
t <400ns; 5v
Active mode; current pulses of
40nAs with peak |I
CC
| <200mA,
t <400ns; 5v,
NDS condition
Active mode; current pulses of
40nAs with peak |I
CC
| <200mA,
t <400ns; 3v
f
RIPPLE
= 20K – 200MHz
Static load current, V
CC
>4.6
Static load current, V
CC
>4.55 or
2.7 volts as selected
C
F
= 3.3μF on V
CC
C
F
= 1.0μF on V
CC
NDS applications
C
F
should be ceramic with low
ESR (<100mΩ).
-0.1
-0.1
4.60
4.75
4.55
2.80
4.6
0.1
0.4
5.25
5.25
5.25
3.2
5.25
V
V
V
V
V
V
V
V
CC
Card supply voltage
including ripple and
noise
2.76
3.2
V
4.6
5.25
V
4.65
5.25
V
2.76
3.2
350
V
mV
mA
mA
V
CCrip
I
CCmax
I
CCF
V
SR
- V
SF
V
SRN
-
V
SFN
C
F
C
FNDS
V
CC
Ripple
Card supply output
current
I
CC
fault current
V
CC
slew rate -
V
CC
slew rate
External filter capacitor
(V
CC
to GND)
External filter capacitor
(V
CC
to GND)
65
90
90
0.02
0.06
1
0.5
0.050
0.160
3.3
1.0
150
0.08
0.26
5
1.5
mA
V/
μ
s
V/
μ
s
μF
μF
NDS applications
C
F
should be ceramic with low ESR
(<100mΩ).
Rev. 1.8
17
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
