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T15N1M16A 参数 Datasheet PDF下载

T15N1M16A图片预览
型号: T15N1M16A
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16低功耗CMOS静态RAM [64K X 16 LOW POWER CMOS STATIC RAM]
分类和应用:
文件页数/大小: 13 页 / 104 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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tm
TE
CH
T15N1M16A
CAPACITANCE
(f = 1 MHz, Ta = 25°C,)
PARAMETER
Input Capacitance
Input/ Output Capacitance
SYMBOL
CONDITION
V
IN
= 0V
V
IN
=
V
OUT
= 0V
MAX.
8
10
UNIT
pF
pF
C
IN
C
I/O
Note:
This parameter is guaranteed by device characterization and is not production tested.
AC TEST CONDITIONS
PARAMETER
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
CONDITIONS
0.4V to 2.0V
5.0 ns
1.4V
C
L
=30pF+1TTL Load
AC TEST LOADS AND WAVEFORM
TTL
DQ
R
L
50 ohm
C
L
*
Z
0
= 50 ohm
Vt =1.4V
C
L
30 pF
Fig.A * Including Scope and Jig Capacitance
Fig.B Output Load Equivalent
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 5
Publication Date: JUL . 2002
Revision: A