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T15N1M16A 参数 Datasheet PDF下载

T15N1M16A图片预览
型号: T15N1M16A
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16低功耗CMOS静态RAM [64K X 16 LOW POWER CMOS STATIC RAM]
分类和应用:
文件页数/大小: 13 页 / 104 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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tm
TE
CH
T15N1M16A
AC CHARACTERISTICS
(
Vcc
=
+2.4 to 3.6V
,
Vss
= 0V, Ta = 0 to +70°C / -40 to +85
°C)
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
LB
,
UB
Access Time
LB
,
UB
Enable to Output in Low-Z
LB
,
UB
Disable to Output in High-Z
SYM.
Min
-55
Max
Min
-70
Max
Min
-100
Max
UNIT
-
100
100
50
-
-
25
-
25
100
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
ACE
t
OE
t
OH
t
LZ
t
HZ
t
OLZ
t
OHZ
t
BA
t
BLZ
t
BHZ
55
-
-
-
10
10
-
5
-
-
10
-
-
55
55
25
-
-
20
-
20
55
-
20
70
-
-
-
10
10
-
5
-
-
10
-
-
70
70
35
-
-
25
-
25
70
-
25
100
-
-
-
10
10
-
5
-
-
10
(2)WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Enable to Write End
Address Valid to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
LB
,
UB
Setup to Write End
SYM.
Min
-55
Max
Min
-70
Max
Min
-100
Max
UNIT
-
-
-
-
-
-
-
-
30
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
t
OW
t
BW
55
45
45
0
40
0
25
0
0
5
45
-
-
-
-
-
-
-
-
20
-
-
70
60
60
0
50
0
30
0
0
5
60
-
-
-
-
-
-
-
-
20
-
-
100
80
80
0
70
0
40
0
0
5
80
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 6
Publication Date: JUL . 2002
Revision: A