tm
6
CLK
COMMAND
TE
CH
T431616D/E
Write and AutoPrecharge command (refer to the following figure)
(RAS# = "H", CAS# = "L", WE# = "L", A11 = “V”, A10 = "H", A0-A7 = Column Address)
The Write and AutoPrecharge command performs the precharge operation automatically after the write
operation. Once this command is given, any subsequent command can not occur within a time delay of
{
(burst
length -1) + t
WR
+ t
RP
(min.)
}
. At full-page burst, only the write operation is performed in this command and the
auto precharge function is ignored.
T0
T1
T2
T3
T4
T5
T6
T7
T8
Bank A
Activate
NOP
NOP
AutoPrecharge
Write A
NOP
NOP
NOP
NOP
NOP
t
DAL
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DIN A0
DIN A1
*
t
DAL
DIN A0
DIN A1
*
t
DAL
DIN A0
DIN A1
t
DAL
=
t
WR
+
t
RP
*
*
Begin AutoPrecharge
Bank can be reactivated at completion of
t
DAL
Burst Write with Auto-Precharge
(Burst Length = 2, CAS# Latency = 1, 2, 3)
7
Mode Register Set command
(RAS# = "L", CAS# = "L", WE# = "L", A11 = “V”, A10 = “V”, A0-A9 = Register Data)
The mode register stores the data for controlling the various operating modes of SDRAM. The Mode
Register Set command programs the values of CAS# latency, Addressing Mode and Burst Length in the Mode
register to make SDRAM useful for a variety of different applications. The default values of the Mode Register
after power-up are undefined; therefore this command must be issued at the power-up sequence. The state of pins
A0~A9 and A11 in the same cycle is the data written to the mode register. One clock cycle is required to
complete the write in the mode register (refer to the following figure). The contents of the mode register can be
changed using the same command and the clock cycle requirements during operation as long as both banks are in
the idle state.
TM Technology Inc. reserves the right
P. 11
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
