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T436416A-8S 参数 Datasheet PDF下载

T436416A-8S图片预览
型号: T436416A-8S
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16 SDRAM [4M X 16 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 710 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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TE  
tmCH  
T436416A  
PIN DESCRIPTION  
INPUT FUNCTION  
PIN  
NAME  
CLK  
System Clock  
Active on the positive going edge to sample all input.  
Disables or enables device operation by masking or enabling all input  
except CLK,CKE and L(U)DQM  
CS  
Chip Select  
Masks system clock to freeze operation from the next clock cycle.  
CKE should be enabled at least one cycle prior to new command.  
Disable input buffers for power down in standby.  
Row/column addresses are multiplexed on the same pins.  
Row address : RA0 ~ RA11,column address : CA0 ~ CA7  
Selects bank to be activated during row address latch time.  
Select bank for read/write during column address latch time.  
Latches row addresses on the positive going edge of the CLK  
with RAS low.  
CKE  
Clock Enable  
A0 ~ A11  
Address  
BA0 ~ BA1  
Bank Select Address  
Row Address Strobe  
RAS  
CAS  
Enables row access & precharge.  
Latches column addresses on the positive going edge of the CLK  
with CAS low.  
Column Address Strobe  
Write Enable  
Enables column access .  
Enables write operation and row precharge.  
WE  
Latches data in starting from CAS , WE active.  
Makes data output Hi-Z, tSHZ after the clock and masks the output.  
Blocks data input when L(U)DQM active.  
Data Input/Output  
Mask  
L(U)DQM  
DQ0 ~ DQ15  
VDD/VSS  
Data Input/Output  
Power Supply/Ground  
Data Output  
Data inputs/outputs are multiplexed on the same pins.  
Power and ground for the input buffers and the core logic.  
Isolated power supply and ground for the output buffers to provide  
improved noise immunity.  
VDDQ/VSSQ  
Power/Ground  
No  
This pin is recommended to be left No Connection on the device.  
N.C/RFU  
Connection/Reserved  
for Future Use  
TM Technology Inc. reserves the right  
to change products or specifications without notice.  
P. 3  
Publication Date: MAY. 2003  
Revision: B