AGR09030E
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
150
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 100 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1.0 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
DQ
= 330 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1.0 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
ISS
C
OSS
C
RSS
—
—
—
56
15.7
0.73
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
—
—
—
2.2
—
3.8
0.35
—
5.0
—
—
S
Vdc
Vdc
Vdc
Symbol
V
(BR)DSS
I
GSS
I
DSS
Min
65
—
—
Typ
—
—
—
Max
—
0.95
50
2.9
Unit
Vdc
µAdc
µAdc
Functional Tests
(in Supplied Test Fixture)
Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(V
DS
= 28 V, P
OUT
= 5 W, I
DQ
= 330 mA)
Output Power
(V
DS
= 28 V, 1 dB compression, I
DQ
= 330 mA)
Drain Efficiency
(V
DS
= 28 V, P
OUT
= P1dB, I
DQ
= 330 mA)
Third-order Intermodulation Distortion
(100 kHz spacing, V
DS
= 28 V, P
OUT
= 30 WPEP, I
DQ
= 330 mA)
Input Return Loss
Ruggedness
(V
DS
= 28 V, P
OUT
= 30 W, I
DQ
= 330 mA, f = 880 MHz,
VSWR = 10:1, all angles)
IMD
I
RL
—
G
L
P1dB
19
30
—
—
—
21
40
57
–31
10
—
—
—
—
—
dB
W
%
dBc
dB
No degradation in output power.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
