AGR09030E
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
24
22
20
POWER GAIN (P
G
) (dB)X
18
16
14
12
10
8
6
4
2
0
10
20
30
P
OUT
(W)X
40
50
60
865 MHz
880 MHz
895 MHz
TEST CONDITIONS:
V
DD
= 28 Vdc, I
DQ
= 0.33 A, T
C
= 30 °C, WAVEFORM = CW.
Figure 6. Power Gain vs. Power Out
65
60
55
50
45
P
OUT
895 MHz
880 MHz
865 MHz
P
OUT
(W)X
40
35
30
25
20
15
10
5
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
EFFICIENCY
895 MHz
880 MHz
865 MHz
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
1.7
1.2
1.3
1.4
1.5
1.6
P
IN
(W)X
TEST CONDITIONS:
V
DD
= 28 Vdc, I
DQ
= 0.33 A, T
C
= 30 °C, WAVEFORM = CW.
Figure 7. Power Out and Drain Efficiency vs. Input Power
DRAIN EFFICIENCY (%)X