AGR09030E
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
0.11
0. 1
0. 4
0.12
0.38
0.13
0.37
0.14
0.36
80
0. 15
0. 35
0. 9
0. 6
60
2
0. 4
0
12
0. 7
7
0. 0
65
0. 5
3
0. 4
0
13
0.
06
70
0. 0
5
0. 4
5
75
EN
T
(+
jX
/
Z
,
o)
14
0
O
R
CA
C
PA
0.
44
IT
IV
E
S
SU
CE
PT
A
E
NC
(
+jB
)
/
Yo
0.2
0. 4
0. 0
4
0. 4
6
15
0
EC
OM
PO
N
0. 6
R—
>
80
TO
TA
NC
0. 8
ERA
0. 47
RE
AC
1. 0
GEN
160
85
ARD
UCT
TOW
0.48
IN
D
GTH
S
170
0.0
—>
W
A
V
E
L
E
N
0. 49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
±
180
Z
0
= 8
0.0
L
O
A
D
<—
WARD
R E SIST A N C E C OM PON E N T (R / Z o), OR C ON D U C T A N C E C OM PON E N T (G / Y o)
0.2
0. 49
-170
0.1
-90
0. 4
TO
TH
S
0.48
EN
G
/Y
(
-jB
o)
0. 6
V
EL
WA
-160
8
0.
-85
AN
. 47
PT
MHz (f)
865 (f1)
880 (f2)
895 (f3)
Z
L
Z
S
(Complex
Source Impedance) (Complex Optimum Load Impedance)
0.618 + j0.290
3.26 + j2.10
0.711 + j0.364
3.39 + j2.47
0.788 + j0.380
3.55 + j2.83
DRAIN (1)
Z
L
SOURCE (3)
GATE (2)
Z
S
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
1. 0
0. 2
CE
2.0
0
0.2
f1
Z
S
f3
0. 6
f1
0. 4
0.1
90
0.
8
Z
L
IV
E
f3
1. 0
1. 4
8
0. 0
0.8
1.2
55
9
0. 0
1
0. 4
0.39
100
90
50
45
1.0
110
40
70
35
0.
4
0. 3
0. 2
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
