AGR 19090 E
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case:
AGR19090EU
AGR19090EF
Table 2. Absolute Maximum Ratings*
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C:
AGR19090EU
AGR19090EF
Derate Above 25
°C:
AGR19090EU
AGR19090EF
Operating Junction Temperature
Storage Temperature Range
Parameter
Symbol
V
DSS
V
GS
P
D
P
D
—
—
T
J
Value
65
–0.5, 15
230
230
1.33
1.33
200
–65, 150
Unit
Vdc
Vdc
W
W
W/°C
W/°C
°C
°C
Symbol
R
θJC
R
θJC
Value
0.75
0.75
Unit
°C/W
°C/W
T
STG
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 3. dc Characteristics
Off Characteristics
130
Drain-source Breakdown Voltage (V
GS
= 0 V, I
D
=
300
µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 0.67 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 270 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 800 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 0.67 A)
Parameter
Symbol
V
(BR)DSS
I
GSS
I
DSS
G
FS
V
GS(th)
V
GS(Q)
V
DS(on)
Min
65
—
—
—
—
—
—
Typ
—
—
—
6.0
—
3.7
0.08
Max
—
2.7
150
8
—
4.8
—
—
Un i t
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
