AGR 19090 E
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
55
54
53
52
51
P
OUT
(dBm)Z
50
49
48
47
46
45
44
43
30
31
32
33
34
35
36
37
38
39
40
41
42
P
OUT
G
PS
16
P3dB = 51.60 dBm (144.53 W)
P1dB = 50.81 dBm (120.66 W)
15
14
13
12
G
PS
(dB)Z
11
10
9
8
7
6
5
4
P
IN
(dBm)Z
Test Conditions:
V
DD
= 28 Vdc, I
DQ
= 800 mA, pulsed CW, 4 µs (on), 40 µs (off), center frequency = 1960 MHz.
Figure 4. Pulse CW P
OUT
vs. P
IN
50
45
40
-25
?
-30
885 kHz
2.25 MHz
1 MHz
-35
-40
ACPR (dBc)Z
-45
-50
-55
-60
?
(%)Z
G
PS
(dB),
35
30
25
20
15
10
5
0
1
10
P
OUT
(W) Avg.Z
G
PS
-65
-70
-75
100
Test Conditions:
V
DD
= 28 Vdc, I
DQ
= 850 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spac-
ing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. P
OUT
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
