AG R190 90E
90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
50
45
-40
-50
-55
-60
400 kHz
600 kHz
G
PS
EVM
0
10
20
30
40
50
60
70
-65
-70
-75
-80
-85
-90
SPECTRAL REGROWTH (dBc)
SPECTRAL REGROWTH (dBc)Z
-45
?
(%), EVM (%)
Z
40
35
30
25
20
15
10
5
0
?
G
PS
(dB),
P
OUT
(W) Avg.Z
Test Conditions:
V
DD
= 28 Vdc, I
DQ
= 800 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. P
OUT
50
45
-40
-45
?
(%), EVM (%)
Z
40
35
30
25
20
15
10
5
0
0
10
EVM
20
?
400 kHz
600 kHz
G
PS
-50
-55
-60
-65
-70
-75
-80
-85
-90
G
PS
(dB),
30
40
50
60
70
P
OUT
(W) Avg.Z
Test Conditions:
V
DD
= 26 Vdc, I
DQ
= 800 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. P
OUT
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
