Advance Product Information
July 14, 2005
TGA2512
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
Vd
Vg
Id
Ig
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
3/
4/
5/
Drain Voltage
Gate Voltage Range
Drain Current (gate biased)
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
PARAMETER
VALUE
[3.5 + (0.0125)(Id)] V
-1 TO +0.5 V
240 mA
7.04 mA
21 dBm
See Note 5/
117
0
C
320
0
C
-65 to 150
0
C
NOTES
2/ 3/
2/ 4/
4/
2/
6/ 7/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed
P
D
.
Unit for Id is A
Total current for the entire MMIC.
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (117
0
C – T
BASE 0
C) /
θ
JC
(
0
C/W)
Where T
BASE
is the base plate temperature.
θ
JC
for self bias is 35.5
0
C/W
θ
JC
for gate bias is 35.0
0
C/W
6/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possibl
levels.
These ratings apply to each individual FET.
7/
TABLE II
DC PROBE TESTS
(Ta = 25
0
C, Nominal)
SYMBOL
V
BVGS, Q1
V
P, Q1,2,4,5,6
PARAMETER
Breakdown Voltage Gate-
Source
Pinch-Off Voltage
MIN.
-30
-0.7
TYP.
MAX.
-5
-0.1
UNITS
V
V
Q1, Q4, Q5 are 400 um FETs. Q2, Q6 are 300 um FETs.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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