Advance Product Information
July 14, 2005
TGA2512
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C Nominal)
PARAMETER
Frequency Range
Drain Voltage, Vd
Drain Current, Id
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Noise Figure, NF
Output Power @ 1dB Gain Compression, P1dB
OIP3
Gate Bias
5 - 15
5.0
160
-0.1
27
15
20
1.4
13
24
Self Bias
5 - 15
5.0
90
-
24
15
20
1.4
6
16
UNITS
GHz
V
mA
V
dB
dB
dB
dB
dBm
dBm
TABLE IV
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
Vd = 5 V
Id = 160 mA Gate Bias
Pdiss = 0.80 W
Vd = 5 V
Id = 90 mA Self Bias
Pdiss = 0.45 W
T
CH
(
O
C)
100
T
JC
(qC/W)
37.6
T
M
(HRS)
5.8E+6
T
JC
Thermal Resistance
(channel to Case)
T
JC
Thermal Resistance
(channel to Case)
82.7
28.2
4.1E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
o
C baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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