36-40GHz Low Noise Amplifier
Bias Conditions :
Freq.
GHz
2
4
6
8
10
12
14
16
18
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
S11
dB
-4.08
-5.88
-5.85
-5.39
-4.86
-4.42
-4.08
-3.86
-3.75
-3.74
-3.79
-3.86
-4.07
-4.25
-4.62
-5.10
-5.86
-6.96
-8.56
-10.85
-13.21
-12.39
-11.54
-17.21
-20.36
-13.92
-10.14
-8.35
-8.59
-10.56
-16.13
-22.46
-15.92
-12.13
-9.91
-8.25
-6.10
-3.79
-1.93
-1.26
-0.92
-0.73
-0.64
-0.66
-0.63
CHA2095a
Typical Scattering Parameters
( On wafer Sij measurements )
Vd= 3.5 Volt, Vg1,2 = -0.5V, Vg3,4 = -0.3V, Id = 90 mA.
S11
/
°
-69.3
-96.9
-115.9
-131.8
-145.7
-158.3
-170.2
177.7
165.3
152.0
145.3
137.4
129.4
120.4
110.0
98.1
83.9
66.3
43.0
9.2
-44.9
-121.0
161.0
82.0
-35.5
-105.9
-139.8
-170.4
157.4
122.6
80.3
-18.9
-81.9
-107.0
-119.3
-123.9
-125.8
-139.9
-154.8
-167.8
179.8
170.5
162.0
154.0
147.5
S12
dB
-72.96
-66.24
-64.15
-60.47
-58.55
-56.57
-54.57
-51.14
-50.79
-50.87
-50.09
-51.20
-50.03
-48.55
-48.26
-49.21
-51.02
-53.65
-55.77
-57.30
-56.20
-49.77
-49.70
-51.44
-47.38
-46.89
-47.95
-46.59
-45.05
-44.36
-42.19
-41.27
-40.37
-39.92
-40.59
-37.38
-37.23
-34.59
-44.23
-44.58
-41.46
-44.38
-65.24
-51.59
-52.88
S12
/
°
56.9
-10.3
-39.7
-85.0
-120.4
-140.8
-164.6
165.0
138.4
107.8
105.4
85.4
84.9
76.9
52.0
33.2
11.8
3.4
2.9
-12.5
32.7
-1.8
-31.8
-35.1
-81.5
-126.8
-139.2
164.0
177.2
142.8
111.1
88.1
70.8
43.0
19.9
-1.2
-30.8
-85.7
-109.4
-75.7
-68.6
-120.1
64.9
-46.4
-54.0
S21
dB
-33.56
-27.97
-25.45
-25.28
-26.33
-28.30
-30.70
-32.77
-33.89
-36.01
-36.43
-38.94
-46.43
-51.42
-33.66
-25.59
-19.53
-13.18
-6.22
1.29
9.14
17.49
24.39
26.82
27.07
26.81
26.72
27.05
27.29
27.30
25.35
25.09
24.61
23.99
23.49
22.86
21.97
19.73
16.66
13.11
9.27
5.69
2.23
-1.42
-4.88
S21
/
°
147.7
81.3
18.8
-35.2
-78.4
-111.9
-135.8
-149.9
-156.4
-165.6
-171.9
-167.0
-171.8
-4.6
-13.4
-17.0
-20.6
-27.7
-37.3
-52.8
-76.6
-114.9
-175.8
115.0
61.7
17.6
-19.2
-55.3
-91.5
-129.0
-164.2
157.8
128.8
98.5
68.1
34.0
-3.5
-41.4
-76.2
-105.0
-129.2
-148.8
-166.3
176.6
162.4
S22
dB
-1.13
-2.97
-4.33
-5.19
-5.62
-5.76
-5.71
-5.49
-5.28
-4.99
-4.92
-4.85
-4.85
-4.76
-4.84
-4.99
-5.14
-5.49
-5.97
-6.73
-7.93
-9.65
-11.68
-10.76
-8.74
-7.39
-7.28
-7.82
-9.01
-10.33
-11.12
-10.65
-10.47
-11.70
-13.82
-16.93
-15.21
-10.25
-7.41
-6.75
-6.70
-6.99
-7.31
-7.72
-8.06
S22
/
°
-47.0
-80.6
-103.3
-119.2
-131.5
-141.3
-150.4
-158.9
-167.9
-177.6
177.3
171.4
166.3
159.4
152.4
144.9
136.4
126.2
114.7
99.1
78.0
41.0
-29.6
-104.3
-142.6
-171.4
167.6
151.2
141.8
136.3
138.9
139.4
130.8
122.6
118.6
129.0
174.9
172.2
152.0
136.3
123.0
112.4
103.1
95.1
87.4
Ref. : DSCHA20958147
3/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
