CHA2095a
Typical on Wafer Measurements
Tamb = +25°C
36-40GHz Low Noise Amplifier
Noise figure versus drain current 60, 85, 100mA:
Gain (dB)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
34
35
36
37
frequency (Ghz)
38
39
40
Gain_60mA
NF_60mA
Gain_85mA
NF_85mA
Gain_100mA
NF_100mA
CHA2095 Vd=3,5v Id= 60 and 85 and 100mA
NF (dB)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Wide band on wafer Sij parameter measurements :
CHA2095 Vd=3,5v Id=90mA
30
25
20
Gain & RLoss ( dB )
15
10
5
0
-5
-10
-15
-20
-25
-30
30
35
40
45
Frequency ( GHz )
50
55
RLoss_IN
RLoss_OUT
Ref. : DSCHA20958147
4/7
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
