VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
VIS
Absolute Maximum Ratings
Parameter
Symbol
VDD
Conditions
Value
Unit
V
Supply Voltage
with respect to VSS
-0.5 to 4.6
Supply Voltage for Output
Input Voltage
VDDQ
VI
with respect to VSSQ
with respect to VSS
with respect to VSSQ
-0.5 to 4.6
-0.5 to VDD+0.5
-0.5 to VDDQ+0.5
50
V
V
Output Voltage
VO
V
Short circuit output current
Power dissipation
IO
mA
W
°C
°C
PD
Ta = 25 °C
1
Operating temperature
Storage temperature
TOPT
TSTG
0 to 70
-65 to 150
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The
device is not meant to be operated under conditions outside the limits described in the operational section of this
specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions (T = 0 ~ 70 °C, unless otherwise noted)
a
Limits
Parameter
Supply Voltage
Symbol
Unit
Min.
3.0
Typ.
3.3
Max.
3.6
VDD
VDDQ
VSS
VSSQ
VIH
V
V
V
V
V
V
Supply Voltage for DQ
Ground
0
3.0
0
0
3.3
0
0
3.6
Ground for DQ
0
High Level Input Voltage (all inputs)
Low Level Input Voltage (all inputs)
2.0
-0.3
VDD + 0.3
0.8
VIL
Pin Capacitance (Ta = 0 ~ 70°C, V = V
= 3.3±0.3V , V = V
= 0V, unless otherwise noted)
SSQ
DD
DDQ
SS
Parameter
Symbol
CIN
Min
2.5
2.5
4.0
Max
3.8
3.5
6.5
Unit
pF
Input Capacitance, address & control pin
Input Capacitance, CLK pin
CCLK
CI/O
pF
Data input / output capacitance
pF
Document :1G5-0177
Rev.2
Page5
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
