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W3H64M72E-ESC 参数 Datasheet PDF下载

W3H64M72E-ESC图片预览
型号: W3H64M72E-ESC
PDF下载: 下载PDF文件 查看货源
内容描述: 64M X 72 DDR2 SDRAM 208 PBGA多芯片封装 [64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 30 页 / 942 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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White Electronic Designs
CAS LATENCY (CL)
The CAS latency (CL) is defined by bits M4–M6, as shown
in Figure 5. CL is the delay, in clock cycles, between the
registration of a READ command and the availability of
the first bit of output data. The CL can be set to 3, 4, 5,
or 6 clocks, depending on the speed grade option being
used.
DDR2 SDRAM does not support any half-clock latencies.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
W3H64M72E-XSBX
ADVANCED*
DDR2 SDRAM also supports a feature called posted
CAS additive latency (AL). This feature allows the READ
command to be issued prior to
t
RCD (MIN) by delaying the
internal command to the DDR2 SDRAM by AL clocks.
Examples of CL = 3 and CL = 4 are shown in Figure 6;
both assume AL = 0. If a READ command is registered
at clock edge
n,
and the CL is
m
clocks, the data will be
available nominally coincident with clock edge
n+m (this
assumes AL = 0).
FIGURE 6 – CAS LATENCY (CL)
CK#
CK
COMMAND
DQS, DQS#
DQ
CL = 3 (AL = 0)
D
OUT
n
D
OUT
n+1
D
OUT
n+2
D
OUT
n+3
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
COMMAND
DQS, DQS#
DQ
T0
T1
T2
T3
T4
T5
T6
READ
NOP
NOP
NOP
NOP
NOP
NOP
D
OUT
n
D
OUT
n+1
D
OUT
n+2
D
OUT
n+3
CL = 4 (AL = 0)
Burst length = 4
Posted CAS# additive latency (AL) = 0
Shown with nominal t AC, t DQSCK, and t DQSQ
TRANSITIONING DATA
DON’T CARE
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 1
11
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com