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W3H64M72E-ESC 参数 Datasheet PDF下载

W3H64M72E-ESC图片预览
型号: W3H64M72E-ESC
PDF下载: 下载PDF文件 查看货源
内容描述: 64M X 72 DDR2 SDRAM 208 PBGA多芯片封装 [64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 30 页 / 942 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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W3H64M72E-XSBX  
White Electronic Designs  
ADVANCED*  
DLL ENABLE/DISABLE  
OUTPUT ENABLE/DISABLE  
ꢀhe DTT may be enabled or disabled by programming bit  
E0 during the TM command, as shown in Figure 7. ꢀhe  
DTT must be enabled for normal operation. DTT enable is  
required during power-up initialization and upon returning  
to normal operation after having disabled the DTT for the  
purpose of debugging or evaluation. Enabling the DTT  
should always be followed by resetting the DTT using an  
TM command.  
ꢀhe OUꢀPUꢀ ENABTE function is defined by bit E12, as  
shown in Figure 7. When enabled (E12 = 0), all outputs  
(DQs, DQS, DQS#, RDQS, RDQS#) function normally.  
When disabled (E12 = 1), all DDR2 SDRAM outputs (DQs,  
DQS, DQS#, RDQS, RDQS#) are disabled, thus removing  
output buffer current. ꢀhe output disable feature is intended  
to be used during ICC characterization of read current.  
ON-DIE TERMINATION (ODT)  
ꢀhe DTT is automatically disabled when entering SETF  
REFRESH operation and is automatically re-enabled and  
reset upon exit of SETF REFRESH operation.  
ODꢀ effective resistance, Rꢀꢀ (EFF), is defined by bits  
E2 and E6 of the EMR, as shown in Figure 7. ꢀhe ODꢀ  
feature is designed to improve signal integrity of the  
memory channel by allowing the DDR2 SDRAM controller  
to independently turn on/off ODꢀ for any or all devices.  
Rꢀꢀ effective resistance values of 50Ω ,75Ω, and 150Ω  
are selectable and apply to each DQ, DQS/DQS#, RDQS/  
RDQS#, UDQS/UDQS#, TDQS/TDQS#, DM, and UDM/  
TDM signals. Bits (E6, E2) determine what ODꢀ resistance  
is enabled by turning on/off “sw1,” “sw2,” or “sw3.” ꢀhe  
ODꢀ effective resistance value is elected by enabling  
switch “sw1,” which enables all R1 values that are 150Ω  
each, enabling an effective resistance of 75Ω (Rꢀꢀ2(EFF)  
= R2/2). Similarly, if “sw2” is enabled, all R2 values that  
are 300Ω each, enable an effective ODꢀ resistance of  
150Ω (Rꢀꢀ2(EFF) = R2/2). Switch “sw3” enables R1 values  
of 100Ω enabling effective resistance of 50Ω Reserved  
states should not be used, as unknown operation or  
incompatibility with future versions may result.  
Any time the DTTis enabled (and subsequently reset), 200  
clock cycles must occur before a READ command can be  
issued, to allow time for the internal clock to synchronize  
with the external clock. Failing to wait for synchronization  
t
t
to occur may result in a violation of the AC or DQSCK  
parameters.  
OUTPUT DRIVE STRENGTH  
ꢀhe output drive strength is defined by bit E1, as shown  
in Figure 7. ꢀhe normal drive strength for all outputs are  
specified to be SSꢀTL18. Programming bit E1 = 0 selects  
normal (full strength) drive strength for all outputs. Selecting  
a reduced drive strength option (E1 = 1) will reduce all  
outputs to approximately 60 percent of the SSꢀTL18 drive  
strength. ꢀhis option is intended for the support of lighter  
load and/or point-to-point environments.  
ꢀhe ODꢀ control ball is used to determine when Rꢀꢀ(EFF)  
is turned on and off, assuming ODꢀ has been enabled via  
bits E2 and E6 of the EMR. ꢀhe ODꢀ feature and ODꢀ  
input ball are only used during active, active power-down  
(both fast-exit and slow-exit modes), and precharge power-  
down modes of operation. ODꢀ must be turned off prior to  
entering self refresh. During power-up and initialization of  
the DDR2 SDRAM, ODꢀ should be disabled until issuing  
the EMR command to enable the ODꢀ feature, at which  
point the ODꢀ ball will determine the Rꢀꢀ(EFF) value.  
Any time the EMR enables the ODꢀ function, ODꢀ may  
not be driven HIGH until eight clocks after the EMR has  
been enabled. See “ODꢀ ꢀiming” section for ODꢀ timing  
diagrams.  
DQS# ENABLE/DISABLE  
ꢀhe DQS# ball is enabled by bit E10. When E10 = 0,  
DQS# is the complement of the differential data strobe pair  
DQS/DQS#. When disabled (E10 = 1), DQS is used in a  
single ended mode and the DQS# ball is disabled. When  
disabled, DQS# should be left floating. ꢀhis function is also  
used to enable/disable RDQS#. If RDQS is enabled (E11  
= 1) and DQS# is enabled (E10 = 0), then both DQS# and  
RDQS# will be enabled.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2006  
Rev. 1  
13  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com