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WEDPN4M72V-100B2M 参数 Datasheet PDF下载

WEDPN4M72V-100B2M图片预览
型号: WEDPN4M72V-100B2M
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mx72同步DRAM [4Mx72 Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 331 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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White Electronic Designs
WEDPN4M72V-XB2X
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11)
Parameter
Access time from CK (pos. edge)
Address hold time
Address setup time
CK high-level width
CK low-level width
Clock cycle time (22)
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
CL = 3 (10)
CL = 2 (10)
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
AC
t
AC
t
AH
t
AS
t
CH
t
CL
t
CK
t
CK
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
HZ
t
HZ
t
LZ
t
OH
t
OHN
t
RAS
t
RC
t
RCD
t
REF
t
REF
t
RFC
t
RP
t
RRD
t
T
t
WR
t
XSR
-100
Min
Max
7
7
Min
-125
Max
6
6
Min
-133
Max
5.5
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
1
2
3
3
10
13
1
2
1
2
1
2
7
7
1
3
1.8
50
70
20
1
2
3
3
8
10
1
2
1
2
1
2
6
6
1
3
1.8
45
68
20
0.8
1.5
2.5
2.5
7.5
10
0.8
1.5
0.8
1.5
0.8
1.5
5.5
6
1
3
1.8
50
68
20
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load) (26)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows) – Commercial, Industrial
Refresh period (4,096 rows) – Military
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank A to ACTIVE bank B command
Transition time (7)
(23)
WRITE recovery time
(24)
Exit SELF REFRESH to ACTIVE command
120,000
120,000
120,000
64
16
70
20
20
0.3
1 CK +
7ns
15
80
70
20
20
0.3
1 CK +
7ns
15
80
64
16
70
20
15
0.3
1 CK +
7.5ns
15
75
64
16
1.2
1.2
1.2
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
January 2005
Rev. 2
11
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com