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BC859C 参数 Datasheet PDF下载

BC859C图片预览
型号: BC859C
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管PNP硅 [General Purpose Transistor PNP Silicon]
分类和应用: 晶体晶体管光电二极管IOT
文件页数/大小: 4 页 / 92 K
品牌: WEITRON [ WEITRON TECHNOLOGY ]
 浏览型号BC859C的Datasheet PDF文件第1页浏览型号BC859C的Datasheet PDF文件第3页浏览型号BC859C的Datasheet PDF文件第4页  
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
(T
A
=25 C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
Electrical Characteristics
On Characteristics
DC Current Gain
(IC= -10uA, VCE=-5.0V)
Characteristics
(IC= -2.0mA,VCE=-5.0V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
hFE
-
-
-
125
220
420
-
-
-
-
-0.6
-
90
150
270
180
290
520
-
-
-0.7
-0.9
-
-
-
-
-
250
475
800
-0.3
-0.65
-
-
-0.75
-0.82
-
Collector-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter On Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
VCE(sat)
V
VBE(sat)
V
VBE(on)
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
Noise Figure
(IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k
, f=1.0kHz, BW=200Hz)
BC856, BC857, BC858 Series
BC859, Series
fT
Cobo
NF
-
-
-
-
10
4.0
100
-
-
-
-
4.5
MHz
pF
dB
Device Marking
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G
BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C
WEITRON
http://www.weitron.com.tw
2/4
Rev A 12-Apr-05