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BC859C 参数 Datasheet PDF下载

BC859C图片预览
型号: BC859C
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管PNP硅 [General Purpose Transistor PNP Silicon]
分类和应用: 晶体晶体管光电二极管IOT
文件页数/大小: 4 页 / 92 K
品牌: WEITRON [ WEITRON TECHNOLOGY ]
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BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
BC856 Series
-1.0
hFE,DC CURRENT GAIN (NORMALIZED)
VCE= -5.0V
TA= 25 C
V,Voltage (Volts)
2.0
1.0
0.5
TJ=25 C
-0.8
VBE(sat)@IC/IB=10
-0.6
VBE@VCE=-5.0V
-0.4
0.2
-0.2
VCE(sat)@IC/IB=10
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
0
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100 -200
-0.1 -0.2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT(mA)
Figure 7. DC Current Gain
Figure 8. "ON" Voltage
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
qVB TEMPERATURE COEFFICIENT (mV/= C)
-1.0
-1.6
IC=
-10mA
-20mA
-50mA
-100mA
-200mA
-1.4
-1.2
-1.8
qVB for VBE
-55 C to 125 C
-0.8
-2.2
-0.4
TJ=25 C
0
-0.02
-0.05 -0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-2.6
-3.3
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
-200
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
40
TJ=25 C
20
Cib
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
500
VCE=-5.0V
C. CAPACTIANCE (pF)
200
100
50
10
8.0
6.0
4.0
Cob
20
2.0
-0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50 -100
-1.0
-10
-100
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12.Current-Gain-Bandwidth Product
WEITRON
http://www.weitron.com.tw
4/4
Rev A 12-Apr-05