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BC859C 参数 Datasheet PDF下载

BC859C图片预览
型号: BC859C
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管PNP硅 [General Purpose Transistor PNP Silicon]
分类和应用: 晶体晶体管光电二极管IOT
文件页数/大小: 4 页 / 92 K
品牌: WEITRON [ WEITRON TECHNOLOGY ]
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BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE IT R ON
BC857/BC858/BC859 Series
-1.0
-0.9
V, VOLTAGE (VOLTS)
TA=25 C
VBE
(sat)
@IC/BC=10
hFE,NORMALIZED DC CURRENT GAIN
2.0
1.5
1.0
0.7
0.5
VCE=10V
TA=25 C
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
VBE
(ON)
@VCE= -10V
0.3
0.2
-0.1
-0.2
-0.5 -1.0
-2.0
-5.0
-10
-20
-50
-100 -200
0
-0.1
-0.2
VCE
(sat)
@IC/BC=10
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
Firure2. "Saturation" And "On" Voltage
VCE, COLLECTOR- EMITTER VOLTAGE (V)
qVB, TEMPERATURE COEFFICIENT (mV/ C)
-2.0
TA=25 C
-1.6
1.0
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
-1.2
IC=
-10mA
IC= -20mA
-0.4
IC= -50mA
IC= -200mA
-0.8
IC= -100mA
0
-0.02
-0.1
-1.0
IB, BASE CURRENT (mA)
-10
-20
-0.2
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
Figure 4. Base-Emitter Temperature Coefficient
10
Cib
7.0
C,CAPACITANCE (pF)
5.0
Cob
TA=25 C
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10V
T
A
= 25 C
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20
-30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current-Gain- Bandwidth Product
WEITRON
http://www.weitron.com.tw
3/4
Rev A 12-Apr-05