WILLAS
SOD-123
FM120-M
MMBT2907ADW1T1
THRU
Dual General Purpose Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
TYPICAL SMALL–SIGNAL
•
Batch process design, excellent power dissipation offers
CHARACTERISTICS
SOD-123H
FM1200-M
Pb Free Produc
Features
Package outline
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
better reverse leakage current and thermal resistance.
FIGURE
NOISE
•
Low profile surface mounted application in order to
Vdc, T = 25°C
V
CE
= 10
A
optimize board space.
•
Low power loss, high efficiency.
10
•
High current capability, low forward voltage drop.
10
•
High surge capability.
•
Guardring for overvoltage protection.
8.0
8.0
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
I = –1.0 mA, R
S
= 430
Ω
6.0
Lead-free parts
C
meet environmental standards of
6.0
•
–500
µA,
R = 560
Ω
MIL-STD-19500 /228
S
–50
µA,
R
code
Ω
•
RoHS product for packing
S
= 2.7 k
suffix "G"
4.0
–100
µA,
R
S
= 1.6 k
Ω
4.0
Halogen free product for packing code suffix "H"
2.0
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
f=1.0 kHz
0.071(1.8)
0.056(1.4)
I
C
= –50µA
–100
µA
–500
µA
–1.0 mA
0.040(1.0)
0.024(0.6)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
0
,
•
0.01 0.02 0.05
:Plated terminals,
2.0 5.0 10
per MIL-STD-750
Terminals
0.1 0.2 0.5 1.0
solderable
20
50 100
•
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
30
20
R
S
=OPTIMUM SOURCE RESISTANCE
2.0
0
50
0.031(0.8) Typ.
0.031(0.8) Typ.
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
Method 2026
f, FREQUENCY (kHz)
Polarity : Indicated
7. Frequency Effects
Figure
by cathode band
f
T
, CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
400
300
200
R
S
, SOURCE RESISTANCE (
Ω
)
Figure 8. Source Resistance Effects
Dimensions in inches and (millimeters)
C
eb
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C, CAPACITANCE(pF)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
10
For capacitive load, derate current by 20%
7.0
100
80
60
RATINGS
V
CE
=–20
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH
V
V
RRM
V
RMS
V
DC
Current
–2.0 –3.0
–5.0
–10
I
O
Marking
5.0
Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
3.0
Maximum DC Blocking Voltage
C
cb
12
20
14
20
–20 –30
13
30
21
40
30
20
–1.0
14
40
28
40
–2.0
T
J
15
25°C
16
=
50
60
35
50
–5.0
–10
18
80
56
80
10
100
70
100
115
150
105
150
–500 –1000
120
200
140
200
42
60
1.0
–50
–20
2.0
Maximum Average Forward Rectified
–0.1 –0.2 –0.3 –0.5
–1.0
30
REVERSE VOLTAGE (VOLTS)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load
Figure
method)
(JEDEC
9. Capacitances
Figure 10. Current–Gain — Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
30
40
120
–100 –200
Typical Thermal Resistance (Note 2)
–1.0
Typical Junction Capacitance (Note 1)
R
ΘJA
C
J
T
J
TSTG
+0.5
-55 to +125
0
-55 to +150
T
J
= 25°C
Operating Temperature Range
-
65
to +175
R
θVC
for V
CE(sat)
COEFFICIENT (mV/ ° C)
V, VOLTAGE (VOLTS)
Storage Temperature Range
–0.8
V
BE(sat)
@ I
C
/I
B
= 10
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
– 0.4
–0.6
CHARACTERISTICS
V
BE(on)
@ V
CE
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
= –10 V
–0.5
V
F
@T A=125℃
– 1.0
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
–1.5
–2.0
–2.5
NOTES:
–0.2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V
CE(sat)
@ I
C
/I
B
= 10
2- Thermal Resistance From Junction to Ambient
0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
R
θVB
for V
BE
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
