WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
SOT-363
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
.087(2.20)
•
Ultra high-speed switching.
.071(1.80)
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
MMBT2907ADW1T1
THRU
PACKAGE
Dual
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
1.0A
General Purpose Transistor
Features
Package outline
SOD-123H
FM1200-M
Pb Free Produc
.004(0.10)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.054(1.35)
.045(1.15)
0.071(1.8)
0.056(1.4)
.096(2.45)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.071(1.80)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.030(0.75)
.021(0.55)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
.056(1.40)
•
Weight : Approximated 0.011 gram
.047(1.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.010(0.25)
.003(0.08)
in inches and (millimeters)
Dimensions
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
.016(0.40)
V
RMS
.004(0.10)
V
DC
I
O
I
FSM
14
20
.043(1.10)
.032(0.80)
12
20
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
30
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Dimensions
R
in inches and (millimeters)
ΘJA
C
J
T
J
TSTG
-55 to +150
-55 to +125
-
65
to +175
CHARACTERISTICS
0.5 mm (min)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.4 mm (min)
1.9 mm
2012-
0
2012-06
0.65 mm 0.65 mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
