5HB03N8
Thermal characteristics
R
DS(ON)
1
-I
D
Drain Current (A)
10
R
DS(ON)
Limited
10
I
D
Drain Current (A)
Limited
DC
1s
100ms
Note (a)
10ms
1ms
100us
1
DC
1s
100ms
10ms
Note (a)
Single Pulse, T
amb
=25°C
1ms
100us
100m
100m
10m
0.1
Single Pulse, T
amb
=25°C
10m
0.1
1
10
1
10
V
DS
Drain-Source Voltage (V)
N-channel Safe Operating Area
-ch nne Saf
140
120
100
80
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
D=0.5
-V
DS
Drain-Source Voltage (V)
P-channel Safe Operating Area
P-c nne Saf
1.0
Max Power Dissipation (W)
Thermal Resistance (°C/W)
One Active Die
25 x 25mm 1oz
Any one
active die
0.5
0.0
0
25
50
75
100
125
150
10
100
1k
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
ansi
edan
One Active Die
Single Pulse
T
amb
=25°C
Derating Curve
Maximum Power (W)
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
ati
Issue 1.0 - April 2010
3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
