5HB03N8
N-channel typical characteristics
10V
I
D
Drain Current (A)
I
D
Drain Current (A)
10
4.5V
4V
V
GS
T = 150°C
10V
4.5V
4V
3.5V
V
GS
10
3.5V
3V
1
3V
1
2.5V
0.1
T = 25°C
2.5V
0.1
2V
0.01
0.1
V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
put
ris
10
Output Characteristics
put
ris
Normalised R
DS(on)
and V
GS(th)
V
DS
= 10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
V
GS
= 10V
I
D
= 5A
R
DS(on)
I
D
Drain Current (A)
1
T = 150°C
0.1
T = 25°C
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
0.01
Typical Transfer Characteristics
ris
Drain-Source On-Resistance (
Ω
)
1000
T = 25°C
V
GS
Gate-Source Voltage (V)
2
3
4
Tj Junction Temperature (°C)
50
100
150
Normalised Curves v Temperature
Nor lis
10
T = 150°C
V
GS
100
3V
I
SD
Reverse Drain Current (A)
2.5V
1
10
1
0.1
0.01
0.01
3.5V
4V
4.5V
10V
0.1
T = 25°C
0.01
DS(on)
0.1
1
10
Issue 1.0 - April 2010
R
On-Resistance v Drain Current
stan
Cur
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
-Dr
ode For
age
1E-3
0.2
0.4
0.6
0.8
1.0
5
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
