5HB03N8
N-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
25°
otherw
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Conditio
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
(a)
on-state resistance
Forward
(a) (c)
Transconductance
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
11.8
1.0
30
0.5
V
µA
nA
V
Ω
S
I
D
= 250μA, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= 250μA, V
DS
= V
GS
V
GS
= 10V, I
D
= 5A
V
GS
= 4.5V, I
D
= 4A
V
DS
= 15V, I
D
= 5A
±
100
3.0
0.025
0.045
Dynamic
Capacitance
(c)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
(b) (c)
C
iss
C
oss
C
rss
430
101
56
pF
pF
pF
V
DS
= 15V, V
GS
= 0V
f= 1MHz
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
(c)
t
d(on)
t
r
t
d(off)
t
f
2.5
3.3
11.5
6.3
ns
ns
ns
ns
V
DD
= 15V, V
GS
= 10V
I
D
= 1A
R
G
≅
6Ω,
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Source– Drai
Diode forward voltage
Reverse recovery time
(a)
(c)
(c)
Q
g
Q
gs
Q
gd
9.0
1.7
2.0
nC
nC
nC
V
DS
=15V, V
GS
= 10V
I
D
= 5A
V
SD
t
rr
Q
rr
0.82
12
4.9
1.2
V
ns
nC
I
S
= 1.7A, V
GS
= 0V
I
S
= 2.1A, di/dt= 100A/μs
Reverse recovery charge
NOTES:
(a) Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.0 - April 2010
4
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
