ZL30416
Data Sheet
5.0 Characteristics
Absolute Maximum Ratings†
Characteristics
Sym.
DDR, VCCR
VBALL
Min.‡
Max.‡
Units
1
2
Supply voltage
V
TBD
-0.5
TBD
V
V
Voltage on any ball
VCC + 0.5
V
DD + 0.5
30
3
4
5
6
Current on any ball
ESD rating
IBALL
VESD
TST
-0.5
-55
mA
V
1250
125
Storage temperature
Package power dissipation
°C
W
PPD
1.0
† Voltages are with respect to ground unless otherwise stated.
‡ Exceeding these values may cause permanent damage. Functional operation under these conditions is not implied.
Recommended Operating Conditions†
Characteristics
Sym.
Min.
Typ.‡
Max.
Units
Notes
1
2
Operating temperature
Positive supply
TOP
-40
3.0
25
+85
3.6
°C
VDD, VCC
3.3
V
† Voltages are with respect to ground unless otherwise stated.
‡ Typical figures are for design aid only: not guaranteed and not subject to production testing.
DC Electrical Characteristics†
Characteristics
Sym.
Min.
Typ.‡
Max.
Units
Notes
1
Supply current
IDD+ICC
185
mA
Note 1
Note 2
2
3
4
CMOS: High-level input
voltage
VIH
VIL
IIL
0.7 VDD
0
VDD
0.3 VDD
5
V
V
CMOS: Low-level input
voltage
CMOS: Input leakage current
1
uA
VI = VDD
or 0 V
5
CMOS: Input bias current for
pulled-down inputs: FS1, FS2
and FS3
IB-PU
300
uA
VI = VDD
6
7
CMOS: Input bias current for
pulled-up inputs: C19oEN
IB-PD
VOH
90
uA
V
VI = 0 V
CMOS: High-level output
voltage
2.4
IOH = 8 mA
12
Zarlink Semiconductor Inc.
ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
