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产品型号2N5153L_02的Datasheet PDF文件预览

2N5153L  
Silicon PNP Transistor  
Data Sheet  
Description  
Applications  
High-speed power switching  
Low power  
Semicoa Semiconductors offers:  
PNP silicon transistor  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N5153LJ)  
JANTX level (2N5153LJX)  
JANTXV level (2N5153LJV)  
JANS level (2N5153LJS)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV and JANS  
Radiation testing (total dose) upon request  
Features  
Hermetically sealed TO-5 metal can  
Also available in chip configuration  
Chip geometry 9702  
Reference document:  
MIL-PRF-19500/545  
Benefits  
Qualification Levels: JAN, JANTX,  
JANTXV and JANS  
Please contact Semicoa for special configurations  
www.SEMICOA.com or (714) 979-1900  
Radiation testing available  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
VCEO  
VCBO  
Rating  
80  
100  
Unit  
Volts  
Volts  
Volts  
A
Emitter-Base Voltage  
VEBO  
IC  
5.5  
Collector Current, Continuous  
2
Power Dissipation, TA = 25OC  
Derate linearly above 25OC  
Power Dissipation, TC = 25OC  
Derate linearly above 25OC  
1
W
PT  
5.7  
mW/°C  
W
11.8  
PT  
66.7  
mW/°C  
RθJA  
175  
15  
Thermal Resistance  
°C/W  
°C  
RθJC  
TJ  
Operating Junction Temperature  
Storage Temperature  
-65 to +200  
TSTG  
-65 to +200  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. D  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 2  
www.SEMICOA.com  
2N5153L  
Silicon PNP Transistor  
Data Sheet  
ELECTRICAL CHARACTERISTICS  
characteristics specified at TA = 25°C  
Off Characteristics  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Cutoff Current  
Collector-Emitter Cutoff Current  
Collector-Emitter Cutoff Current  
Symbol  
V(BR)CEO IC = 100 mA  
Test Conditions  
Min  
80  
Typ  
Max  
Units  
Volts  
µA  
mA  
µA  
ICES1  
ICES2  
ICEO  
VCE = 60 Volts  
VCE = 100 Volts  
VCE = 40 Volts  
1
1
50  
V
CE = 60 Volts, VEB = 2 Volts,  
nA  
Collector-Emitter Cutoff Current  
ICEX  
500  
TA = 150°C  
µA  
Emitter-Base Cutoff Current  
Emitter-Base Cutoff Current  
IEBO1  
IEBO1  
VEB = 4 Volts  
1
1
mA  
VEB = 5.5 Volts  
Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%  
On Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
IC = 50 mA, VCE = 5 Volts  
IC = 2.5 A, VCE = 5 Volts  
IC = 5 A, VCE = 5 Volts  
IC = 2.5 A, VCE = 5 Volts  
TA = -55°C  
hFE1  
hFE2  
hFE3  
hFE4  
50  
70  
40  
25  
200  
DC Current Gain  
Volts  
Volts  
Base-Emitter Voltage  
VBE  
VCE = 5 Volts, IC = 2.5 mA  
1.45  
VBEsat1  
VBEsat2  
VCEsat1  
VCEsat2  
IC = 2.5 A, IB = 250 mA  
IC = 5 A, IB = 500 mA  
IC = 2.5 A, IB = 250 mA  
IC = 5 A, IB = 500 mA  
1.45  
2.20  
0.75  
1.50  
Base-Emitter Saturation Voltage  
Volts  
Collector-Emitter Saturation Voltage  
Dynamic Characteristics  
Parameter  
Magnitude – Common Emitter, Short  
Circuit Forward Current Transfer Ratio  
Small Signal Short Circuit Forward  
Current Transfer Ratio  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
VCE = 5 Volts, IC = 500 mA,  
|hFE|  
7
f = 10 MHz  
CE = 5 Volts, IC = 100 mA,  
f = 1 kHz  
V
hFE  
50  
V
CB = 10 Volts, IE = 0 mA,  
pF  
Open Circuit Output Capacitance  
COBO  
250  
f = 1 MHz  
Switching Characteristics  
µs  
µs  
µs  
µs  
Saturated Turn-On Time  
tON  
ts  
0.5  
1.4  
0.5  
1.5  
IC = 5 A, IB1= 500 mA,  
IB2= -500 mA, VBEoff = 3.7 V,  
RL = 6 Ω  
Storage Time  
Fall Time  
tf  
Saturated Turn-Off Time  
tOFF  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. D  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 2 of 2  
www.SEMICOA.com  
配单直通车
2N5153S产品参数
型号:2N5153S
是否无铅:含铅
是否Rohs认证:不符合
生命周期:Not Recommended
IHS 制造商:SEMELAB LTD
零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3
针数:2
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.29.00.75
风险等级:5.07
Is Samacsys:N
最大集电极电流 (IC):5 A
集电极-发射极最大电压:80 V
配置:SINGLE
最小直流电流增益 (hFE):70
JEDEC-95代码:TO-205AD
JESD-30 代码:O-MBCY-W3
元件数量:1
端子数量:3
封装主体材料:METAL
封装形状:ROUND
封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP
认证状态:Not Qualified
表面贴装:NO
端子形式:WIRE
端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHz
Base Number Matches:1
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